View NSBA114EDXV6D_2520923.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2004 january, 2004 ? rev. 3 1 publication order number: nsba114edxv6/d nsba114edxv6t1, nsba114edxv6t5 preferred devices dual bias resistor transistors pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the nsba114edxv6t1 series, two brt devices are housed in the sot?563 package which is ideal for low?power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch tape and reel ? lead free solder plating maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo ?50 vdc collector-emitter voltage v ceo ?50 vdc collector current i c ?100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 357 (note 1) 2.9 (note 1) mw mw/ c thermal resistance junction-to-ambient r ja 350 (note 1) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 500 (note 1) 4.0 (note 1) mw mw/ c thermal resistance junction-to-ambient r ja 250 (note 1) c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad preferred devices are recommended choices for future use and best overall value. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) sot?563 case 463a plastic 1 2 3 6 5 4 xx = specific device code (see table on page 2) d = date code marking diagram xx d http://onsemi.com device package shipping ordering information nsba114edxv6t1 sot?563 4 mm pitch 4000/tape & reel nsba114edxv6t5 sot?563 2 mm pitch 8000/tape & reel
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 2 device marking and resistor values device package marking r1 (k ) r2 (k ) nsba114edxv6t1 sot?563 0a 10 10 nsba124edxv6t1 sot?563 0b 22 22 nsba144edxv6t1 sot?563 0c 47 47 nsba114ydxv6t1 sot?563 0d 10 47 nsba114tdxv6t1 (notes 2) sot?563 0e 10 nsba143tdxv6t1 (notes 2) sot?563 0f 4.7 nsba113edxv6t1 (notes 2) sot?563 0g 1.0 1.0 nsba123edxv6t1 (notes 2) sot?563 0h 2.2 2.2 nsba143edxv6t1 (notes 2) sot?563 0j 4.7 4.7 nsba143zdxv6t1 (notes 2) sot?563 0k 4.7 47 nsba124xdxv6t1 (notes 2) sot?563 0l 22 47 nsba123jdxv6t1 (notes 2) sot?563 0m 2.2 47 nsba115edxv6t1 (notes 2) sot?563 0n 100 100 nsba144wdxv6t1 (notes 2) sot?563 0p 47 22 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = ?50 v, i e = 0) i cbo ? ? ?100 nadc collector-emitter cutoff current (v ce = ?50 v, i b = 0) i ceo ? ? ?500 nadc emitter-base cutoff current nsba114edxv6t1 (v eb = ?6.0 v, i c = 0) nsba124edxv6t1 nsba144edxv6t1 nsba114ydxv6t1 nsba114tdxv6t1 nsba143tdxv6t1 nsba113edxv6t1 nsba123edxv6t1 nsba143edxv6t1 nsba143zdxv6t1 nsba124xdxv6t1 nsba123jdxv6t1 nsba115edxv6t1 nsba144wdxv6t1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?0.5 ?0.2 ?0.1 ?0.2 ?0.9 ?1.9 ?4.3 ?2.3 ?1.5 ?0.18 ?0.13 ?0.2 ?0.05 ?0.13 madc collector-base breakdown voltage (i c = ?10 a, i e = 0) v (br)cbo ?50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = ?2.0 ma, i b = 0) v (br)ceo ?50 ? ? vdc on characteristics (note 3) collector-emitter saturation voltage (i c = ?10 ma, i e = ?0.3 ma) (i c = ?10 ma, i b = ?5 ma) nsba113edxv6t1/nsba123edxv6t1 (i c = ?10 ma, i b = ?1 ma) nsba114tdxv6t1/nsba143tdxv6t1 nsba143edxv6t1/nsba143zdxv6t1/nsba124xdxv6t1 v ce(sat) ? ? ?0.25 vdc 2. new resistor combinations. updated curves to follow in subsequent data sheets. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) (continued) characteristic unit max typ min symbol on characteristics (note 3) (continued) dc current gain nsba114edxv6t1 (v ce = ?10 v, i c = ?5.0 ma) nsba124edxv6t1 nsba144edxv6t1 nsba114ydxv6t1 nsba114tdxv6t1 nsba143tdxv6t1 nsba113edxv6t1 nsba123edxv6t1 nsba143edxv6t1 nsba143zdxv6t1 nsba124xdxv6t1 nsba123jdxv6t1 nsba115edxv6t1 nsba144wdxv6t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ? output voltage (on) (v cc = ?5.0 v, v b = ?2.5 v, r l = 1.0 k ) nsba114edxv6t1 nsba124edxv6t1 nsba114ydxv6t1 nsba114tdxv6t1 nsba143tdxv6t1 nsba113edxv6t1 nsba123edxv6t1 nsba143edxv6t1 nsba143zdxv6t1 nsba124xdxv6t1 nsba123jdxv6t1 (v cc = ?5.0 v, v b = ?3.5 v, r l = 1.0 k ) nsba144edxv6t1 (v cc = ?5.0 v, v b = ?5.5 v, r l = 1.0 k ) nsba115edxv6t1 (v cc = ?5.0 v, v b = ?4.0 v, r l = 1.0 k ) nsba144wdxv6t1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 vdc output voltage (off) (v cc = ?5.0 v, v b = ?0.5 v, r l = 1.0 k ) (v cc = ?5.0 v, v b = ?0.05 v, r l = 1.0 k ) nsba113edxv6t1 (v cc = ?5.0 v, v b = ? 0.25 v, r l = 1.0 k ) nsba114tdxv6t1 nsba143tdxv6t1 nsba123edxv6t1 nsba143zdxv6t1 v oh ?4.9 ? ? vdc input resistor nsba114edxv6t1 nsba124edxv6t1 nsba144edxv6t1 nsba114ydxv6t1 nsba114tdxv6t1 nsba143tdxv6t1 nsba113edxv6t1 nsba123edxv6t1 nsba143edxv6t1 nsba143zdxv6t1 nsba124xdxv6t1 nsba123jdxv6t1 nsba115edxv6t1 nsba144wdxv6t1 r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k resistor ratio nsba114edxv6t1/nsba124edxv6t1/ nsba144edxv6t1/nsba115edxv6t1 nsba114ydxv6t1 nsba114tdxv6t1/nsba143tdxv6t1 nsba113edxv6t1/nsba123edxv6t1/nsba143edxv6t1 nsba143zdxv6t1 nsba124xdxv6t1 nsba123jdxv6t1 nsba144wdxv6t1 r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 2. new resistor combinations. updated curves to follow in subsequent data sheets. 3. pulse test: pulse width < 300 s, duty cycle < 2.0%
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 4 figure 1. derating curve ? all devices 300 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r ja = 490 c/w 250 p d , power dissipation (mw) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage figure 6. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , maximum collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v typical electrical characteristics e nsba114edxv6t1 typical electrical characteristics e nsba114edxv6t1 all nsba114edxv6t1 series devices
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 5 typical electrical characteristics e nsba124edxv6t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 9. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 10. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 11. input voltage versus output current 0.01 v ce(sat) , maximum collector voltage (volts) 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 6 typical electrical characteristics e nsba144edxv6t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c v ce(sat) , maximum collector voltage (volts) figure 13. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 14. output capacitance figure 15. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 16. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 7 typical electrical characteristics e nsba114ydxv6t1 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 v ce(sat) , maximum collector voltage (volts) figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 8 typical electrical characteristics e nsba114tdxv6t1 figure 22. dc current gain i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v typical electrical characteristics e nsba143tdxv6t1 figure 23. dc current gain i c , collector current (ma) 1.0 10 100 h fe , dc current gain (normalized) 1000 100 t a = 25 c v ce = 5.0 v v ce = 10 v
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 9 typical electrical characteristics e nsba115edxv6t1 75 c 25 c ?25 c figure 24. maximum collector voltage versus collector current figure 25. dc current gain figure 26. output capacitance figure 27. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 28. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ?25 c v ce = 10 v 75 c 25 c t a = ?25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ?25 c f = 1 mhz i e = 0 v t a = 25 c
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 10 typical electrical characteristics e nsba144wdxv6t1 figure 29. maximum collector voltage versus collector current figure 30. dc current gain figure 31. output capacitance figure 32. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 33. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 v ce(sat) , maximum collector voltage (volts) h fe , dc current gain (normalized) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ?25 c v o = 5 v 75 c 25 c t a = ?25 c v o = 0.2 v 75 c 25 c t a = ?25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ?25 c
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 11 package dimensions sot?563, 6 lead case 463a?01 issue o g m 0.08 (0.003) x d 6 5 pl c j ?x? ?y? notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeters 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. dim a min max min max inches 1.50 1.70 0.059 0.067 millimeters b 1.10 1.30 0.043 0.051 c 0.50 0.60 0.020 0.024 d 0.17 0.27 0.007 0.011 g 0.50 bsc 0.020 bsc j 0.08 0.18 0.003 0.007 k s style 1: pin 1. emitter 1 2. base 1 3. collector 2 4. emitter 2 5. base 2 6. collector 1 a b y 12 3 4 5 s k style 2: pin 1. emitter 1 2. emitter2 3. base 2 4. collector 2 5. base 1 6. collector 1 0.004 0.012 0.059 0.067 0.10 0.30 1.50 1.70 6 style 3: pin 1. cathode 1 2. cathode 1 3. anode/anode 2 4. cathode 2 5. cathode 2 6. anode/anode 1 style 4: pin 1. collector 2. collector 3. base 4. emitter 5. collector 6. collector 1.35 0.0531 0.5 0.0197 mm inches scale 20:1 0.5 0.0197 1.0 0.0394 0.45 0.0177 0.3 0.0118 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
nsba114edxv6t1, nsba114edxv6t5 http://onsemi.com 12 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 nsba114edxv6/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

▲Up To Search▲

Price & Availability of NSBA114EDXV6D

	To Download NSBA114EDXV6D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .